SFF2N60-KR copyright@semiwell semiconductor co., ltd., all rights are reserved semiwell semiconductor absolute maximum ratings (t j = 25 unless otherwise specified) symbol parameter ratings units v dss drain-source voltage 600 v i d drain current t c =25 t c =100 2 1.35 a v gss gate-source voltage 30 v i dm drain current pulse (note 1) 8 a e as single pulse avalanche energy (note 2) 130 mj e ar repetitive avalanche energy (note 1) 5.55 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation t c =25 23.6 w t j , t stg operation and storage temp erature range -45 ~ 150 n-channel mosfet features r ds(on) max 5.0ohm at v gs = 10v gate charge ( typical 9.0nc) improve dv/dt capability, fast switching 100% avalanche tested general description this mosfet is produced using advanced planar strip dmos technology. this latest technology has been especially designed to minimize on-state resistance have a high rugged avalanche characteri stics. these device are well suited for high efficiency switch mode power supply active power factor correction. electronic lamp based on half bridge topology
SFF2N60-KR thermal characteristics symbol parameter ratings unit r jc thermal resistance junction to case 5.3 /w r cs thermal resistance case to sink typ. 0.5 /w r ja thermal resistance junction to ambient 62.5 /w electrical characteristics ( tc = 25 unless otherwise noted) symbol items conditions ratings unit min typ. max bv dss drain-source breakdown voltage v gs = 0 v, i d = 250ua 600 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, reference to 25 0.7 v/ i dss zero gate voltage drain current v ds = 600v, v gs = 0v v ds = 480v, t s = 125 1 10 ua i gssf gate body leakage current forward v gs = 30v, v ds = 0v 100 na i gssr gate body leakage current reverse v gs = -30v, v ds = 0v -100 na on characteristics v gs(th) gate threshold voltage v gs = v ds , i d = 250ua 2.5 4.5 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 3.5a 4.1 5.0 ? dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0v f = 1.0mhz 200 pf c oss output capacitance 20 pf c rss reverse transfer capacitance 4 pf 2/5
SFF2N60-KR switching characteristics symbol items conditions min typ. max units t d(on) turn-on delay time v dd = 300v, i d = 2.0a r g = 25 ? (note 4,5) 10 ns t r turn-on rise time 25 ns t d(off) turn-off delay time 25 ns t f turn-off fall time 30 ns q g total gate charge v ds = 480v, i d = 2.0a v gs = 10v (note 4,5) 9 nc q gs gate-source charge 1.5 nc q gd gate-drain charge 4.0 nc drain-source diode characteristics i s maximum continuous drain-source diode forward current 2.0 a i sm maximum pulse drain-source diode forward current 8.0 a v sd drain-source diode forward voltage v gs = 0v, i s = 2.0a 1.4 v t rr reverse recovery time v gs = 0v, i s = 2.0a dl f /dt =100 a/us (note 4) 230 ns q rr reverse recovery charge 1.0 uc notes 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 60mh, i as = 2.0a, v dd = 50v, r g = 25 ? , starting t j = 25 3. i sd 2.0a, di/dt 200a/us, v dd bv dss , starting t j = 25 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operation temperature 3/5
SFF2N60-KR fig. 1 on-region characteristics fig. 2 on-resistance variation vs drain current and gate voltage fig. 3 breakdown voltage variation vs fig 4. on-resistance variation vs temperature temperature fig. 5 maximum safe operation area fig. 6 maximum drain current vs case temp. 4/5
SFF2N60-KR to-220f package dimension 5/5
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